A simulation of the base widening effect in a high frequency bipolar transistor using a highly robust finite difference algorithm

Author:

FERGUSON R. S.,RYAN W. D.,ARMSTRONG G. A.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Reference22 articles.

1. ARANDJELOVIC , V. , 1967 , Numerical analysis of transistors. Thesis , University of London .

2. An accurate numerical steady-state one-dimensional solution of the P-N junction

3. GRAY , P. E. , DE WITT , D. , BOOTHROYD , A. R. , and GIBBONS , J. F. , 1964 ,Physical Electronics and Circuit Models of Transistors, Semiconductor Electronics Education Committee, Vol. 2 ( New York John Wiley and Sons, Inc. ), pp. 245 – 250 .

4. A self-consistent iterative scheme for one-dimensional steady state transistor calculations

5. Electron-Hole Recombination in Germanium

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