Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications
Author:
Affiliation:
1. ECE Department, S.K.P. Engineering College, Tiruvannamalai, Tamilnadu, India
2. ECE Department, Amal Jyothi College of Engineering, Kottayam, Kerala, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2017.1376354
Reference33 articles.
1. High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT
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3. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
4. 100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz
5. Low-Voltage and High-Speed Operations of 30-nm-Gate Pseudomorphic $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}/\hbox{In}_{0.7}\hbox{Ga}_{0.3} \hbox{As}$ HEMTs Under Cryogenic Conditions
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