Simulation-based analysis of an L-patterned negative-capacitance dual tunnel VTFET
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, India
Funder
no financial
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2022.2164069
Reference49 articles.
1. Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode
2. A Tunnel FET for $V_{DD}$ Scaling Below 0.6 V With a CMOS-Comparable Performance
3. Vertical Tunnel Field-Effect Transistor
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation based analysis of HK-Ge-Step-FinFET and its usage as inverter & SRAM;Physica Scripta;2024-07-12
2. Study on Field Effect Transistors Based Gas Sensors;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08
3. Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications;Silicon;2024-04-12
4. Design and implementation of the logic gates using electrically doped configurable polarity control double gate tunnel FET;Physica Scripta;2024-02-22
5. Recent Advancement in TFET-Based Biosensor Addressing Technique and Outcome: A Review;Springer Tracts in Electrical and Electronics Engineering;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3