Contact mechanisms and design principles for alloyed Ohmic contacts to p-type GaN
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430410001697306
Reference36 articles.
1. Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
2. Au/GaN interface: Initial stages of formation and temperature-induced effects
3. Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN
4. Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
5. Very low resistance multilayer Ohmic contact to n‐GaN
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