Defects in bombarded amorphous silicon-Reference-Cited by-同舟云学术

Defects in bombarded amorphous silicon

Published:1979-12 Issue:6 Volume:40 Page:451-464
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Street R.¹,Biegelsen D.¹,Stuke J.¹²

Affiliation:

1. a Xerox Palo Alto Research Center , Palo Alto , California , 94304 , U.S.A.

2. b Fachbereich Physik , Universität Marburg , 3550 , Marburg , F. R. Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418637908226769

Reference22 articles.

1. Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors

2. Photoluminescence and lifetime studies on plasma discharge a-Si

3. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon

4. Engemann , D. Fischer , R. Richter , F. W. and Wagner , H. Proceedings of the Sixth Conference on Amorphous and Liquid Semiconductors. Edited by: Kolomiets , B. T. pp.217Leningrad: Nauka.

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