Doping effects of aluminium on the properties of hydrogenated amorphous silicon–carbon alloy films prepared by magnetron sputtering-Reference-Cited by-同舟云学术

Doping effects of aluminium on the properties of hydrogenated amorphous silicon–carbon alloy films prepared by magnetron sputtering

Published:1990-11 Issue:5 Volume:62 Page:527-536
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Saito N.¹,Tomioka Y.¹,Senda H.¹,Yamaguchi T.¹,Kawamura K.²

Affiliation:

1. a Research Institute of Electronics, Shizuoka University , Hamamatsu , 432 , Japan

2. b Electronics R & D Laboratory, Nippon Steel Corporation , Kawasaki , 211 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819008215250

Reference14 articles.

1. Doping effects of group III and group V elements in unhydrogenated neon-sputtered amorphous silicon

2. Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

3. Sputtered hydrogenated amorphous Si alloyed with Al

4. The influence of aluminium upon electronic transport in r.f. sputtered amorphous Si : H

5. Matsuda , A. Yokoyama , S. Tanaka , M. Ueda , M. Igarashi , T. Smith , Z. Matsuura , H. Hata , N. Yamasaki , S. Oheda , H. Okushi , H. and Tanaka , K. 1988. Extended Abstracts, 35th Spring Meeting., 341Tokyo: Japan Society of Applied Physics and Related Societies. in Japanese, 1988

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