Diffuse scattering, size effect and alloy disorder in ternary and quaternary III

Diffuse scattering, size effect and alloy disorder in ternary and quaternary III–V compounds

Published:1990-10 Issue:4 Volume:62 Page:373-394
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Glas F.¹,Gors C.¹²³,Hénoc P.¹

Affiliation:

1. a Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux (Unité associée au CNRS 250) , 196 avenue Henri Ravéra, 92220 , Bagneux , France

2. b Laboratoire de Physique des Solides , Université de Paris Sud , 91405 , Orsay Cedex, France

3. c U.E.R. de Physique Fondamentale , Université des Sciences et Techniques de Lille I , 59655 , Villeneuve d'Ascq Cedex, France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819008215242

Reference32 articles.

1. Local structure of ternary semiconducting random solid solutions: Extended x-ray-absorption fine structure ofCd1−xMnxTe

2. Bellessa , J. Gors , C. Launois , P. Quillec , M. and Launois , H. 1983. Gallium Arsenide and Related Compounds 1982, Conference Series No. 65 Edited by: Stillman , G. E. 529–536. Bristol: Institute of Physics.

3. Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxy

4. Influence of clustering on the mobility of III‐V semiconductor alloys

5. Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices

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