Structural and Optical Properties ofIn2S3Thin Films Prepared by Flash Evaporation

Author:

Bouabid K.1,Ihlal A.1,Outzourhit A.2,Ameziane E. L.2

Affiliation:

1. Equipe de physique des semi-conducteurs, Département de physique, Faculté des sciences, Université Ibn Zohr, Agadir B.P.28/S, Morocco

2. Laboratoire de physique des solides et des couches minces, Département de physique, Faculté des sciences Semlalia, Marrakech BP:S/3293, Morocco

Abstract

In2S3thin films were deposited by flash evaporation ofIn2S3powder. The effect of annealing in vacuum and under sulphur atmosphere on the structural and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation ofβ-In2S3phase is obtained after annealing under vacuum at 693 K. Heat treatments under sulphur pressure lead to the formation of the above phase at a less annealing temperature (573 K). The energy dispersive X-ray (EDX) analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness and the annealing temperature.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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