Influence of Ti-content in the bottom electrodes on the ferroelectric properties of SrBi2Ta2O9(SBT)
Author:
Affiliation:
1. a Siemens AG, Semiconductor Group, Dept. HL PI M , D-81730, Munich, Germany
2. b Symetrix Corporation , Colorado Springs , CO 80918, USA
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589708013016
Reference4 articles.
1. Bruchhaus , R. Pitzer , D. Eibl , O. Scheithauer , U. and Hösler , W. 1991.Ferroelectric Thin Films II, Edited by: Myers , E. R. Kingon , A. I. and Tuttle , B. A. Vol. 243, 123Mat. Res. Soc. Symp. Proc.
2. Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration
3. In-situ sputter deposition of PT and PZT films on Platinum and RuO2 electrodes
4. Lee , J. S. Kwon , H. J. Jeong , Y. W. Kim , H. H. Park , K. H. and Kim , C. Y. 1996.Ferroelectric Thin Films V, Edited by: Desu , S. B. Ramesh , R. Tuttle , B. A. Jones , R. E. and Yoo , I. K. Vol. 433, 175Mat. Res. Soc. Symp. Proc.
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