Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD-Reference-Cited by-同舟云学术

Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD

Published:1998-09 Issue:1-4 Volume:21 Page:107-114
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fujisawa Hironori¹,Hyodo Satoshi¹,Jitsui Kazuto¹,Shimizu Masaru¹,Niu Hirohiko¹,Okino Hirotake²,Shiosaki Tadashi²

Affiliation:

1. a Department of Electronics, Faculty of Engineering , Himeji Institute of Technology , 2167 Shosha, Himeji , Hyogo , 671-2201 , Japan

2. b Department of Electronic Science and Engineering , Graduate School of Engineering, Kyoto University , Yoshida Honmachi, Sakyo-ku, Kyoto , 606-8317 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202055

Reference6 articles.

1. Preparation of Pb(Zr,Ti)O3thin films on electrodes including IrO2

2. Preparation ofPb(Zr,Ti)O3Thin Films on Ir andIrO2Electrodes

3. Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes

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