On the nature of trapped states in an MoS2 two-dimensional semiconductor with sulfur vacancies
Author:
Affiliation:
1. Department of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa, Israel
2. The Nancy and Stephen Grand Technion Energy Program, Technion – Israel Institute of Technology, Haifa, Israel
Funder
Grand Technion Energy Program
Publisher
Informa UK Limited
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,Molecular Biology,Biophysics
Link
https://www.tandfonline.com/doi/pdf/10.1080/00268976.2019.1576931
Reference31 articles.
1. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
2. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control
3. Field-Effect Transistors Built from All Two-Dimensional Material Components
4. Strategies to suppress cation vacancies in metal oxide alloys: consequences for solar energy conversion
5. Theoretical investigation of thermodynamic stability and mobility of the oxygen vacancy in ThO2–UO2solid solutions
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