Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode-Reference-Cited by-同舟云学术

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Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode

Published:2018-04-06 Issue:1 Volume:7 Page:107-116
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Ghivela Girish Chandra¹,Sengupta Joydeep¹,Mitra Monojit²

Affiliation:

1. Electronics and Communication Engineering Department, Visvesvaraya National Institute of Technology, Nagpur, India

2. Electronics and Tele-Communication Engineering Department, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2018.1460869

Reference17 articles.

1. Noise in mixed tunneling avalanche transit time (MITATT) diodes

2. Computer analysis of DC field and current-density profiles of DAR impatt diode

3. Space Charge Effect of IMPATT Diode Using Si, Ge, GaAs, InP, WzGaN and 4H-SiC at Ka-Band

4. A small-signal theory of avalanche noise in IMPATT diodes

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis;Materials;2023-01-01

2. Influence of SiC hetero-polytype barriers on the performance of IMPATT terahertz diodes;Superlattices and Microstructures;2021-04

3. Effects of Space Charges in IMPATT Source at Terahertz Regime;Emerging Trends in Terahertz Engineering and System Technologies;2021

4. Performance of 4H-SiC IMPATT Diode at Ka- and W-Band with Temperature Variation;Lecture Notes in Electrical Engineering;2020-10-15

5. Computation of quantum‐corrected noise in graphene‐SiC‐based impact avalanche transit time diode;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-03-10

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