TCAD-Based Assessment of Dual-Gate MISHEMT with Sapphire, SiC, and Silicon Substrate
Author:
Affiliation:
1. Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India
2. Maharaja Agrasen College, University of Delhi, New Delhi 110096, India
3. DeenDayal Upadhyaya College, University of Delhi, New Delhi 110078, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/02564602.2019.1699455
Reference28 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. A Survey of Wide Bandgap Power Semiconductor Devices
3. Design Approach of Traps Affected Source–Gate Regions in GaN HEMTs
4. Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
5. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
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1. TCAD Investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs;IETE Technical Review;2021-11-21
2. Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications;Journal of Computational Electronics;2021-01-02
3. Uplink Sum-Rate and Power Scaling Laws for Multi-User Massive MIMO-FBMC Systems;IEEE Transactions on Communications;2020-01
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