Image charges and their influence on the growth and the nature of thin oxide films
Author:
Affiliation:
1. a Theoretical Physics Division , Harwell Laboratory , Oxon , OX11 , ORA , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708211206
Reference14 articles.
1. Low-pressure oxidation of silicon stimulated by low-energy electron bombardment
2. General Relationship for the Thermal Oxidation of Silicon
3. Oxidation of silicon: strain and linear kinetics
4. Vacancy formation energies near the surface of an ionic crystal
Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric;IEEE Electron Device Letters;2024-05
2. Adhesion Microscopy as a Nanoscale Probe for Oxidation and Charge Generation at Metal-Oxide Interfaces;ACS Applied Electronic Materials;2023-08-29
3. Model for Evaluating Silica Coating Thickness Against Atomic-Oxygen Corrosion in Space Materials;Journal of Spacecraft and Rockets;2012-01
4. Enhanced Creep Resistance via Ion Exchange Processes in Al/Mgal2O4 Composites;Progress in Reaction Kinetics and Mechanism;2010-12
5. A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment;Science in China Series E: Technological Sciences;2009-03-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3