The zero-temperature d.c. conductivity versus density and the metal-insulator transition in some heavily doped semiconductor systems-Reference-Cited by-同舟云学术

The zero-temperature d.c. conductivity versus density and the metal-insulator transition in some heavily doped semiconductor systems

Published:1985-09 Issue:3 Volume:52 Page:459-469
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Berggren K.-F.¹,Sernelius B. E.¹

Affiliation:

1. a Department of Physics and Measurement Technology , Linköping University , S-581 83 , Linköping , Sweden

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818508240615

Reference39 articles.

1. Non-ohmic effects of anderson localization

2. Altishuler , B. L. Aronov , A. G. Khmel'nitzkii , D. E. and Larkin , A. I. 1982. Quantum Theory of Solids, Edited by: Lifshitz , I. M. 130Moscow: MIR.

3. Low-temperature magnetic susceptibility of Si: P in the nonmetallic region

4. Metal-to-non-metal transitions in doped germanium and silicon

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4. On the impurity states in doped semiconductors via the alternant molecular orbital method;International Journal of Quantum Chemistry;1988-03-12

5. Metal-Non-metal Transition in the Double-Donors Si:P, As and Si:P, Sb: A Simple Approach;Physica Scripta;1986-01-01