Characteristics of amorphous transparent InGaZn6O9 electrodes prepared by RF-magnetron sputtering for fully transparent thin film transistors-Reference-Cited by-同舟云学术

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Characteristics of amorphous transparent InGaZn6O9 electrodes prepared by RF-magnetron sputtering for fully transparent thin film transistors

Published:2020-07-02 Issue:1 Volume:705 Page:48-56
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Shin Han Jae¹²,Kim Hak-Rin²^ORCID,Lee Do Kyung³^ORCID

Affiliation:

1. Gumi Electronics and Information Technology Research Institute, Gumi, Gyeongsangbuk-do, Korea;

2. School of Electronics Engineering, Kyungpook National University, Daegu, Korea;

3. School of Advanced Materials Science and Chemical Engineering, Daegu Catholic University, Gyeongsan, Gyeongsangbuk-do, Korea

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/15421406.2020.1741823

Reference10 articles.

1. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

2. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

3. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

4. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

5. Process development of ITO source/drain electrode for the top-gate indium–gallium–zinc oxide transparent thin-film transistor

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