Optical and photoluminescence properties of a-Si1−x N x : H/a-Si3N4: H and a-Si1−x C x : H/a-SiC: H superlattices-Reference-Cited by-同舟云学术

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Optical and photoluminescence properties of a-Si1−x N x : H/a-Si3N4: H and a-Si1−x C x : H/a-SiC: H superlattices

Published:1997-09 Issue:3 Volume:76 Page:287-298
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Giorgis Fabrizio¹

Affiliation:

1. a Dipartimento di Fisica ed Unita delľ , Istituto Nazionale per la Fisica della Materia del Politecnico di Torino , C.so Duca degli Abruzzi 24, 10129 , Torino , Italy

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639708241094

Reference18 articles.

1. Amorphous Semiconductor Superlattices

2. Photoluminescence properties of a-SiNx: H alloys

3. Physical properties ofa-Si:H based compositional periodic multilayers

4. The optical bandgap of multilayers of a-Si:H and alloys: A comparison of experiment and thin-film optics calculations

5. Persistent photoconductivity in compositional modulated amorphous semiconductors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices;Journal of Luminescence;1998-12

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