Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500°C-Reference-Cited by-同舟云学术

Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500°C

Published:1997-09 Issue:3 Volume:76 Page:299-308
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Conde J. P.¹,Brogueira P.²,Chu V.³

Affiliation:

1. a Department of Materials Engineering , Institute Superior Técnico , Av. Rovisco Pais, 1096 , Lisboa , Codex , Portugal

2. b Department of Physics , Institute Superior Técnico , Av. Rovisco Pais, 1096 , Lisboa , Codex , Portugal

3. c Institute de Engenharia de Sistemas e Computadores , Rua Alves Redol 9, 1000 , Lisboa , Portugal

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639708241095

Reference31 articles.

1. Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometry

2. Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

3. Conde , J. P. Brogueira , P. Castanha , R. and Chu , V. 1996. “Materials Research Society Symposium Proceedings”. Vol. 420, Pittsburgh, Pennsylvania: Materials Research Society. (to be published).

4. Production of high‐quality amorphous silicon films by evaporative silane surface decomposition

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