Compositional elastic domains in epitaxial layers of phase-separating semiconductor alloys-Reference-Cited by-同舟云学术

Compositional elastic domains in epitaxial layers of phase-separating semiconductor alloys

Published:1994-09 Issue:3 Volume:70 Page:557-566
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Ipatova I. P.¹,Malyshkin V. G.¹,Shchukin V. A.¹

Affiliation:

1. a A. F. Ioffe Physical Technical Institute , St Petersburg , 194021 , Russia

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240230

Reference29 articles.

1. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process

2. Surface layer spinodal decomposition in In1−xGaxAsyP1−yand In1−xGaxAs grown by hydride transport vapor‐phase epitaxy

3. INSTABILITY CRITERIA IN TERNARY AND QUATERNARY I I I-V EPITAXIAL SOLID SOLUTIONS

4. De Cremoux , B. Hirtz , P. and Ricciardi , J. 1981. GaAs and Related Compounds 1980, Institute of Physics Conference Series No. 56 Edited by: Thim , H. W. 115–124. London: Institute of Physics.

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