A comparison of the hydrogenated amorphous Si schottky barrier and the hydrogenated amorphous Si p—i—n dark forward-bias current density—Voltage characteristics-Reference-Cited by-同舟云学术

A comparison of the hydrogenated amorphous Si schottky barrier and the hydrogenated amorphous Si p—i—n dark forward-bias current density—Voltage characteristics

Published:1996-10 Issue:4 Volume:74 Page:407-426
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Rubinelli F. A.¹²,Liu H.¹³,Wronski C. R.¹³

Affiliation:

1. a Grupo de Física de los Materiales, Institute de Desarollo Tecnologico para la Indústria Química, Conseio Nacional de Investigaciones Centificas y técnicas, Universidad Nacionale del Literal , Güemes 3450, 3000 , Santa Fe , Argentina

2. b Department of Atomic and Interface Physics , Utrecht University , Princetonplein 5, PO Box 80000, 3508 , TA Utrecht , The Netherlands

3. c Electronic Materials and Processing Research Laboratory, The Pennsylvania State University , University Park , Pennsylvania , 16802 , USA

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639608240343

Reference25 articles.

1. PhD Thesis;Arch J. K.,1991

2. Computer analysis of the role ofp‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous siliconp‐i‐nsolar cells

3. Experimental study of bulk limitation of the current in hydrogenated amorphous silicon diodes

4. Amorphous silicon solar cell

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