Cs adsorption characteristics on β-Ga1.9375Mg0.0625O3 (100) surface: the first principles calculation investigation-Reference-Cited by-同舟云学术

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Cs adsorption characteristics on β-Ga1.9375Mg0.0625O3 (100) surface: the first principles calculation investigation

Published:2021-10-03 Issue:1 Volume:582 Page:171-184
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Shan-shan Ren¹,He Zhao¹,Xiao-qian Fu¹²,Heng-jiao Gao³

Affiliation:

1. School of Information Science and Engineering, University of Jinan, Jinan, China

2. Shandong Provincial Key Laboratory of Network based Intelligent Computing, University of Jinan, Jinan, China

3. Key Laboratory of vacuum technology and physics, Lanzhou Institute of Space Physics, Lanzhou, China

Funder

National Natural Science Foundation of China

China Scholarship Council

Shandong Natural Science Foundation

University of Jinan PhD Foundation and The Natural Science Foundation of Jiangsu Province

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2021.1951045

Reference56 articles.

1. A review of the most recent progresses of state-of-art gallium oxide power devices

2. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

3. Interface thermal conductance between β-Ga2O3 and different substrates

4. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

5. Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

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