Investigation on operation robustness of p-type low-temperature polycrystalline silicon thin-film transistor-based micro light-emitting diode pixel circuit using pulse width modulation under component fluctuation
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Korea
2. Visual Display Business, Samsung Electronics, Co., Ltd., Suwon, Korea
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/15980316.2022.2029778
Reference22 articles.
1. An Active Matrix Micro-Pixelated LED Display Driver for High Luminance Uniformity Using Resistance Mismatch Compensation Method
2. A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays
3. Fabrication and Characterization of Active-Matrix $960\times540$ Blue GaN-Based Micro-LED Display
4. 66-4: High Brightness Active Matrix Micro-LEDs with LTPS TFT Backplane
5. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
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