Effects of lattice orientation and defect degree on Si/Al solid interfacial structure and thermal resistance
Author:
Affiliation:
1. Key Laboratory of Efficient Utilization of Low and Medium Grade Energy, MOE, School of Mechanical Engineering, Tianjin University, Tianjin, People’s Republic of China
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modeling and Simulation,Information Systems,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/08927022.2023.2281982
Reference64 articles.
1. Thermal transport mechanism of AlN/SiG/3C–SiC typical heterostructures
2. Micro/nano metal–organic frameworks meet energy chemistry: A review of materials synthesis and applications
3. Progress in measurement of thermoelectric properties of micro/nano thermoelectric materials: A critical review
4. Towards fast-charging high-energy lithium-ion batteries: From nano- to micro-structuring perspectives
5. Guo H Wu L Kong Y et al. inventorsMicroelectronic device nano-interfacial bonding layer thermal resistance analysis method involves performing thermal resistance analysis process for extracting nano-interfacial bonding layer thermal resistance patent CN106682279-A;CN106682279-B.
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