IMPATT devices based on group III–V compound semiconductors: prospects as potential terahertz radiators
Author:
Affiliation:
1. Institute of Radio Physics and Electronics, University of Calcutta, 92 APC Road, Kolkata 700009, India
2. Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, West Bengal 712139, India
Publisher
The Hong Kong Institution of Engineers
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/1023697X.2014.945231
Reference41 articles.
1. Millimeter-Wave CW IMPATT Diodes and Oscillators
2. A 90-GHz double-drift IMPATT diode made with Si MBE
3. D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz
4. GaAs IMPATT diodes for 60 GHz
5. Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks
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3. Search of a Suitable Heterojunction Material System for Terahertz Wave Generation;Lecture Notes in Electrical Engineering;2021-09-22
4. Section II: Prospect of Heterojunction (HT) IMPATT Devices as a Source of Terahertz Radiation;Advances in Terahertz Technology and Its Applications;2021
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