Effect of annealing temperature on K-shell X-ray fluorescence parameters of zinc oxide thin films prepared by the sol-gel method
Author:
Affiliation:
1. Department of Physics, Faculty of Art and Science, Recep Tayyip Erdoğan University, Rize, Turkey;
2. Department of Material Science and Nanotechnology Engineering, Faculty of Engineering, Recep Tayyip Erdoğan University, Rize, Turkey
Publisher
Informa UK Limited
Subject
Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/00387010.2019.1566264
Reference33 articles.
1. Photoluminescence of ZnO thin films on Si substrate with and without ITO buffer layer
2. Examination of the Change of the Characteristic X-Rays of the Zinc in Fluorine- and Boron-Doped ZnO Thin Films
3. Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films
4. Determination of valence electronic structure of Ni in Ni-B alloy coatings using Kβ-to-Kα X-ray intensity ratios
5. Alloying effect on K X-ray intensity ratio and production cross section values of Zn and Cr in ZnCr alloys
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1. Empirical calculation of K-shell fluorescence cross sections for elements in the atomic range 16 ≤ Z ≤ 92 by photon effects ranging from 5.46 to 123.6 keV (Three-dimensional formulae);Physica Scripta;2024-09-04
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