Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials-Reference-Cited by-同舟云学术

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Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials

Published:2005-10 Issue:10-12 Volume:160 Page:477-482
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Wołowski J.,Badziak J.,Czarnecka A.,Boody F.P.,Gammino S.,Krása J.,Láska L.,Mezzasalma A.,Parys P.,Rosiński M.,Rohlena K.,Torrisi L.,Ullschmied J.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150500492156

Reference17 articles.

1. Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability

2. Laser produced Ag ions for direct implantation

3. Laser induced direct implantation of ions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites;Laser and Particle Beams;2007-02-28

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