Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420150.2015.1052433
Reference29 articles.
1. Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
2. Radiation Effects in MOS Oxides
3. Radiation effects and hardening of MOS technology: devices and circuits
4. Total ionizing dose effects in MOS oxides and devices
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2. Gamma-ray irradiation-induced oxidation and disproportionation at the amorphous SiO2/Si interfaces;Journal of Materials Chemistry C;2020
3. The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors;Sensors and Actuators A: Physical;2017-05
4. The characteristics of Ta2O5 films deposited by radio frequency pure oxygen ion assisted deposition (RFOIAD) technology;Journal of Applied Physics;2017-02-14
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