Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals-Reference-Cited by-同舟云学术

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Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals

Published:2003-07 Issue:7 Volume:158 Page:481-489
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Umarov F. F.,Rasulov A. M.,Khaidarov A. Kh.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/1042015021000008484

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculation of geometric dimensions and hydrodynamic characteristics of venturi pipes of a self-draining solar circuit;E3S Web of Conferences;2024

2. Channeling of hydrogen isotopes in gold and tungsten;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-07

3. Ion channeling and implantation into Cu (100) and Cu<formula><inf><roman>3</roman></inf></formula>Au (100);SPIE Proceedings;2007-05-04

4. Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110);Computational Materials Science;2005-04

5. Low-Energy Ne+ Ion Channeling and Implantation into Cu(100) and Cu3Au(100);MRS Proceedings;2003

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