Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices-Reference-Cited by-同舟云学术

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Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices

Published:2019-02 Issue:1-2 Volume:174 Page:66-75
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Arun N.¹,Vinod Kumar K.²,Mangababu A.²,Nageswara Rao S. V. S.¹²,Pathak A. P.²³

Affiliation:

1. Centre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, Hyderabad, India

2. School of Physics, University of Hyderabad, Hyderabad, India

3. Department of Physics, Sikkim University, Gangtok, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1579213

Reference26 articles.

1. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

3. Transport properties of two finite armchair graphene nanoribbons

4. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

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1. HfO2-based resistive random access memory with an ultrahigh switching ratio;Journal of Applied Physics;2024-08-15

2. Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes;Semiconductor Science and Technology;2024-05-30

3. Performance degradation and I–V model of TiO2-film-based resistive switching memory under proton irradiation;Applied Physics Letters;2023-05-22

4. Low-voltage resistive switching characteristics of nano-bowl-like NiO arrays;SCIENTIA SINICA Physica, Mechanica & Astronomica;2023-01-01

5. Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices;Journal of Electronic Materials;2022-12-14

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