Si/SnSe2 Multilayer Films for Phase Change Memory Applications-Reference-Cited by-同舟云学术

Si/SnSe2 Multilayer Films for Phase Change Memory Applications

Published:2012-01 Issue:1 Volume:140 Page:1-7
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Sun Mingcheng¹,Hu Yifeng¹,Shen Bo¹,Zhai Jiwei¹,Song Sannian²,Song Zhitang²

Affiliation:

1. a Functional Materials Research Laboratory, Tongji University , Shanghai , 200092 , China

2. b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences , Shanghai , 200050 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.741363

Reference19 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Phase-change materials for rewriteable data storage

3. Low-cost and nanoscale non-volatile memory concept for future silicon chips

4. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory

5. Chalcogenide memory arrays: characterization and radiation effects

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