Dielectric Enhancement Effect in (Ba0.7Sr0.3TiO3/Ba0.5Sr0.5TiO3)n (n = 1,2,3,4) Multilayered Thin Films Deposited by Chemical Solution Deposition Method-Reference-Cited by-同舟云学术

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Dielectric Enhancement Effect in (Ba0.7Sr0.3TiO3/Ba0.5Sr0.5TiO3)n (n = 1,2,3,4) Multilayered Thin Films Deposited by Chemical Solution Deposition Method

Published:2012-01 Issue:1 Volume:135 Page:94-102
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fu Yankun¹²,Chang Qing²,Liu Qiangchun²³,Dai Jianming²³,Wu Dajun²,Zhu Xuebin²,Zhang Weijie²,Sun Yuping²

Affiliation:

1. a Shandong University of Science and Technology , Qingdao , 266510 , China

2. b Key Laboratory of Materials Physics, Institute of Solid State Physics, and Hefei High Magnetic Field Laboratory, Chinese Academy of Sciences , Hefei , 230031 , China

3. c School of Physics and Electronics Information, Huaibei Normal University , Huaibei , 235000 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.685412

Reference27 articles.

1. A comprehensive review of microwave system requirements on thin-film ferroelectrics

2. The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films

3. The influence of Mg doping on the materials properties of Ba1−xSrxTiO3 thin films for tunable device applications

4. Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

5. Preparation and Dielectric Properties ofSrTiO3/BaTiO3Multilayer Thin Films by Sol-Gel Method

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