A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise Analyze
Author:
Affiliation:
1. School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584587.2014.903792
Reference8 articles.
1. Introduction to flash memory
2. Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters
3. A study of hot-hole injection during programming drain disturb in flash memories
4. Substrate Injection Induced Program Disturb - A New Reliability Consideration for Flash-Eprqm Arrays
5. Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors
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