Residual defects in silicon after As+ion implantation at self-annealing regimes
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578708210064
Reference14 articles.
1. Modification of silicon structure during highly intensive Ar+ion implantation
2. Rissel, Kh. and Rughe, J. 1983.Ion ImplantationEdited by: Guseva, M. J. 360ppMoscow
3. Ion beam processes in Si
4. Mechanism for dynamic annealing during high flux ion irradiation in Si
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1. High‐dose phenomena in zinc‐implanted silicon crystals;Journal of Applied Physics;1996-04
2. Ion-beam-induced epitaxial crystallization and amorphization in silicon;Materials Science Reports;1990-12
3. Ion-beam-induced epitaxial crystallization and amorphization in silicon;Materials Science Reports;1990-01
4. Anomalous distribution of As during implantation in silicon under self‐annealing conditions;Journal of Applied Physics;1989-10
5. Self-Annealing in Ion-Implaned Silicon;Physica Status Solidi (a);1989-03-16
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