Ion bombardment effect on Si homoepitaxial growth from ion molecular beams-Reference-Cited by-同舟云学术

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Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

Published:1987-12 Issue:1-2 Volume:105 Page:117-131
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Pugacheva T. S.,Saidov M. S.,Lutovich A. S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578708210067

Reference24 articles.

1. Epitaxial growth of silicon assisted by ion implantation

2. Epitaxial growth of Si on (1̄012) Al2O3 by partially ionized vapor deposition

3. Ion beam deposition of special film structures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Damage;Computer Simulation of Ion-Solid Interactions;1991

2. Sputtering;Computer Simulation of Ion-Solid Interactions;1991

3. Ranges;Computer Simulation of Ion-Solid Interactions;1991

4. “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow;Physica Status Solidi (a);1989-08-16

5. Sputtering Yields;Topics in Applied Physics

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