Sputtering of Al2O3 and LiNbO3 in the electronic stopping region
Author:
Affiliation:
1. a W. K. Kellogg Radiation Laboratory, California Institute of Technology , Pasadena, California, 91125
2. b Department of Modern Physics , Lanzhou University , Lanzhou, China.
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337578208223000
Reference8 articles.
1. Possible new sputtering mechanism in track registering materials
2. Sputtering of uranium tetrafluoride in the electronic stopping region
3. A thermalized ion explosion model for high energy sputtering and track registration
4. "Sputtering" of Ice by MeV Light Ions
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1. Angular distribution of the sputtered atoms from UO2 under high electronic stopping power irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05
2. Electronic stopping power threshold of sputtering in yttrium iron garnet;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-02
3. MeV He ion impact desorption of hydrogen isotopes from an InP(001)-p(1 × 1) surface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-06
4. Sputtering yields of thin films for MeV microbeam irradiation: Preliminary results;Radiation Effects and Defects in Solids;1994-12
5. Energy and angular distributions of sputtered particles;International Journal of Mass Spectrometry and Ion Processes;1994-12
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