Lattice positions of implanted ions in silicon crystals-Reference-Cited by-同舟云学术

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Lattice positions of implanted ions in silicon crystals

Published:1984-01 Issue:1-2 Volume:83 Page:135-143
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Frerichs H. P.,Kalbitzer S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578408215797

Reference10 articles.

1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

2. Kalbitzer, S., Feuerstein, A., Oetzmann, H. and Wittner, J. 1976. 4th Conf. 1976, Denton. Scientific and Industrial Applications of Small Accelerators, pp.403

3. Doorway states and pre-equilibrium reactions

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2. Defect generation by radioactive decay of light elements in n-type silicon;Physica B: Condensed Matter;2006-04

3. The study of the interaction of indium with tellurium in silicon;Applied Physics A;2005-11

4. Formation and properties of In–Te pairs in Si;Physica B: Condensed Matter;2003-12

5. Extended Defects from Ion Implantation and Annealing;Rapid Thermal Processing;1993

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