Build-up and annealing of damage produced by low-energy argon ions at Si(lll) surface
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578708225342
Reference22 articles.
1. Modifications des caractéristiques électriques de contacts métal-silicium par bombardement d'ions argon de faible énergie
2. Dependence of low energy ion beam exposure effects in silicon on ion species, exposure history, and material properties
3. Ion‐bombardment‐induced changes in the electronic structure of silicon surfaces
4. Local Atomic Structure of a Clean Surface by Surface Extended X-Ray Absorption Fine Structure: Amorphized Si
5. The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces
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