Study of gradual conversion of Al to insulator by oxygen implantation
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578608209622
Reference10 articles.
1. Conduction in metal oxide thin films formed by oxygen ion implantation
2. Some preliminary studies of the structure of ion bombarded thin films
3. Synthesis of Al2O3 by ion implantation of oxygen into aluminium
4. Formation of subsurface Al 2O 3 layers in aluminum by oxygen ion implantation
5. On the nature of the phases formed when metals are implanted with oxygen or nitrogen
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Properties of oxide and nitride layers in aluminium produced by high dose ion implantation;Materials Science and Engineering: A;1989-08
2. Effects of Oxygen Ion Implantation on the Conduction Electron Spin Resonance in Aluminum;Japanese Journal of Applied Physics;1989-03-20
3. Structural investigation of Al2O3 formed by ion implantation at various doses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
4. Electrical characteristics of ion-beam-synthesized aluminium oxide layers;Thin Solid Films;1988-09
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