Electron and neutron irradiation of boron and phosphorus-doped silicon at 80°K
Author:
Publisher
Informa UK Limited
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786436908228702
Reference15 articles.
1. Electron Bombardment of Silicon
2. Average Neutron Energy of Reactor Spectra and Its Influence on Displacement Damage
3. Energy Dissipation by Ions in the kev Region
4. Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Neutron Damage Annealing in Silicon n-Channel Junction Field Effect Transistors;IEEE Transactions on Nuclear Science;1972
2. Carrier trapping by defect clusters in neutron-irradiated silicon;Physica Status Solidi (a);1970-06-16
3. Isochronal annealing ofpandn-type silicon irradiated at 80°K;Philosophical Magazine;1969-11
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