Applications of molecular dynamics methods to low energy ion beams and film deposition processes
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420159408219794
Reference43 articles.
1. Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy
2. Strain modification by ion-assisted molecular beam epitaxy in the SixGe1−x alloy system: a kinetic analysis
3. Suppression of three-dimensional island nucleation during GaAs growth on Si(100)
4. Atomic-Scale Simulation in Materials Science
5. Developing potentials for atomistic simulations
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