AFM and Raman studies of topological insulator materials subject to argon plasma etching
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2012.728009
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1. Three-Dimensional Topological Insulators
2. A tunable topological insulator in the spin helical Dirac transport regime
3. Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements
4. A Raman and far-infrared investigation of phonons in the rhombohedral V2–VI3 compounds Bi2Te3, Bi2Se3, Sb2Te3 and Bi2(Te1−xSex)3 (0
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