In-cascade ionization effects on defect production in 3C silicon carbide
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
Funder
U.S. Department of Energy
Office of Science
Basic Energy Sciences, Materials Sciences and Engineering Division
University of Tennessee, Knoxville
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/21663831.2017.1334241
Reference33 articles.
1. Ionization-induced annealing of pre-existing defects in silicon carbide
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5. Young's Modulus of Various Refractory Materials as a Function of Temperature
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