Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD
Author:
Affiliation:
1. Laboratorio MDM, IMM-CNR, Agrate Brianza, MB, Italy
2. IMEM-CNR, Parma, Italy
3. Department of Physics, University of Basel, Basel, Switzerland
Funder
FP7 Nanosciences, Nanotechnologies, Materials and new Production Technologies
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/21663831.2017.1384409
Reference32 articles.
1. Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires
2. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure
3. Ge/Si nanowire heterostructures as high-performance field-effect transistors
4. Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells
5. Orientation-Controlled Growth of Single-Crystal Silicon-Nanowire Arrays
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1. Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires;Nanomaterials;2022-05-10
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3. Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD;Journal of Physics D: Applied Physics;2020-01-23
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