Influence of co-sputtering AlB <sub>2</sub> to TaB <sub>2</sub> on stoichiometry of non-reactively sputtered boride thin films-Reference-Cited by-同舟云学术

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Influence of co-sputtering AlB ₂ to TaB ₂ on stoichiometry of non-reactively sputtered boride thin films

Published:2024-06-02 Issue:8 Volume:12 Page:561-570
ISSN:2166-3831
Container-title:Materials Research Letters
language:en
Short-container-title:Materials Research Letters

Author:

Hu Chun¹,Lin Shuyao¹²^ORCID,Podsednik M.³⁴^ORCID,Mráz Stanislav⁵,Wojcik T.¹^ORCID,Limbeck A.³^ORCID,Koutná Nikola¹²^ORCID,Mayrhofer Paul H.¹^ORCID

Affiliation:

1. Institute of Materials Science and Technology, TU Wien, Vienna, Austria

2. Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, Sweden

3. Institute of Chemical Technologies and Analytics, TU Wien, Wien, Austria

4. KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH, Villach, Austria

5. Materials Chemistry, RWTH Aachen University, Aachen, Germany

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/21663831.2024.2357700

Reference44 articles.

1. Ab initio inspired design of ternary boride thin films

2. Designing thin film materials — Ternary borides from first principles

3. Review of transition-metal diboride thin films

4. Revisiting the origins of super-hardness in TiB2+z thin films – Impact of growth conditions and anisotropy

5. Theoretical predictions of stability, electronic properties, elastic anisotropy, thermodynamics, and optical properties of MB2 (M = V, Nb, Zr)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation Resistance and Thermal Stability of Crystalline Alb2 Thin Films;2024

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