[Paper] Investigation of Implantation Damage Recovery using Microwave Annealing for High Performance Image Sensing Devices-Reference-Cited by-同舟云学术

[Paper] Investigation of Implantation Damage Recovery using Microwave Annealing for High Performance Image Sensing Devices

Published:2016 Issue:2 Volume:4 Page:85-90
ISSN:2186-7364
Container-title:ITE Transactions on Media Technology and Applications
language:en
Short-container-title:MTA

Author:

Kimura Masatoshi¹,Yamaguchi Tadashi²,Kuroi Takashi¹

Affiliation:

1. Technology Division, Renesas Semiconductor Manufacturing Co.,Ltd.

2. Production Technology Development Unit, Renesas Electronics Corp.

Publisher

Institute of Image Information and Television Engineers

Subject

Computer Graphics and Computer-Aided Design,Media Technology,Signal Processing

Link

https://www.jstage.jst.go.jp/article/mta/4/2/4_85/_pdf

Reference8 articles.

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2. 2) T.L.Alford, D.C.Thompson, J.W.May er, N.David.Theodore: "Dopant activation in ion implanted silicon by microwave annealing", J.Applied Physics 106, 114902 (2009)

3. 3) Y.J.Lee: "Dopant Activation by Microwave Anneal", Proceeding of IEEE IWJT, pp.44-49 (2011)

4. 4) Peng Xu, Chaochao Fu, David Wei Zhang, Dongping Wu, Jun Luo, Chao Zhao, Zhi-Bin Zhang, Shi-Li Zhang: "Ultra-shallow junctions formed using microwave annealing", Applied Physics Letters, 102, 122114 (2013)

5. 5) T. Iwai, K.Eriguchi, S.Yamauchi, N.Noro, J.Kitagawa, K.Ono: "Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface", Proceeding of International Symposium on Dry Process, pp.135-136 (2014)

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