Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiN[sub x]:H/InP structures-Reference-Cited by-同舟云学术

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Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiN[sub x]:H/InP structures

Published:2001 Issue:1 Volume:19 Page:186
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Redondo E.,Mártil I.,González-Dı́az G.,Castán H.,Dueñas S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gd2O3 on InP Substrates;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

2. Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells;IEEE Journal of Photovoltaics;2016-09

3. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications;Nanoscale Research Letters;2016-07-16

4. Scavenging effect on plasma oxidized Gd2O3grown by high pressure sputtering on Si and InP substrates;Semiconductor Science and Technology;2015-03-01

5. Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure;Japanese Journal of Applied Physics;2011-07-05

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