Dry etching characteristics of TiN film using Ar/CHF[sub 3], Ar/Cl[sub 2], and Ar/BCl[sub 3] gas chemistries in an inductively coupled plasma-Reference-Cited by-同舟云学术

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Dry etching characteristics of TiN film using Ar/CHF[sub 3], Ar/Cl[sub 2], and Ar/BCl[sub 3] gas chemistries in an inductively coupled plasma

Published:2003 Issue:5 Volume:21 Page:2163
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tonotani J.,Iwamoto T.,Sato F.,Hattori K.,Ohmi S.,Iwai H.

Publisher

American Vacuum Society

Subject

General Engineering

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