SiO2 etch characteristics and environmental impact of Ar/C3F6O chemistry-Reference-Cited by-同舟云学术

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SiO2 etch characteristics and environmental impact of Ar/C3F6O chemistry

Published:2018-11 Issue:6 Volume:36 Page:061306
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Lee Ho Seok¹,Yang Kyung Chae²,Kim Soo Gang¹,Shin Ye Ji²,Suh Dae Woong³,Song Han Dock³,Lee Nae Eung¹²,Yeom Geun Young¹²

Affiliation:

1. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-Do 16419, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do 16419, Republic of Korea

3. Wonik Materials Co., Ltd., Research and Development Group, Cheongju 28215, Republic of Korea

Funder

Korea Institute of Energy Technology Evaluation and Planning

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5027446

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of clean SiO2 atomic layer etching based on C6F6 physisorption;Applied Surface Science;2024-10

2. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

3. Construction and validation of C3F8 electron impact and heavy particle reaction scheme for modeling plasma discharges;Physics of Plasmas;2024-03-01

4. Low global warming C₅F₁₀O isomers for plasma atomic layer etching and reactive ion etching of SiO₂ and Si₃N₄;Plasma Processes and Polymers;2024-01-20

5. Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction;Materials;2023-08-14

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