Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy-Reference-Cited by-同舟云学术

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Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy

Published:1996-07 Issue:4 Volume:14 Page:2488-2492
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Firon M.,Bonnelle C.,Mayeux A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580007

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for LED applications;Nanoscale;2018

2. Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films;Nanotechnology;2017-02-17

3. Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region;Novel In-Plane Semiconductor Lasers X;2011-02-10

4. Adhesion Improvement of Plasma-Polymerized Maleic Anhydride Films on Gold Using HMDSO/O2 Adhesion Layers;Plasma Processes and Polymers;2007-11-22

5. Target poisoning during reactive sputtering of silicon with oxygen and nitrogen;Materials Science and Engineering: B;2007-05

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