Reactive ion etching of Ta–Si–N diffusion barriers in CF4+O2-Reference-Cited by-同舟云学术

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Reactive ion etching of Ta–Si–N diffusion barriers in CF4+O2

Published:1994-07 Issue:4 Volume:12 Page:2352
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

McLane G. F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel technique to pattern silver using CF[sub 4] and CF[sub 4]/O[sub 2] glow discharges;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

2. Surface-micromachined Ta-Si-N beams for use in micromechanics;Journal of Micromechanics and Microengineering;1998-06-01

3. Ternary TaSiN films for sensors and actuators;Sensors and Actuators A: Physical;1997-06

4. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization;Applied Surface Science;1995-10

5. Reactive ion etching of Ta-Si-N diffusion barriers in CHF3+O2;Electronics Letters;1995-03-30

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